| PART |
Description |
Maker |
| MX69F162 MX69F164C3BTXBI-90 MX69F162C3BB MX69F162C |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY
|
MXIC
MCNIX[Macronix International]
|
| K8D1716UBC-DC07 K8D1716UBC-DC08 K8D1716UBC-DI07 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
http://
|
| K8D1716UBB K8D1716UTB K8D1716UTB-TC09 K8D1716UTB-Y |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
16M Dual Bank NOR Flash Memory
|
http://
Samsung
|
| MB84VD21081-85-PBS MB84VD21081-85-PTS MB84VD21091- |
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 2M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Spansion Inc.
SPANSION LLC
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| K4X56163PE-LFG K4X56163PE-LG |
16M x16 Mobile DDR SDRAM
|
Samsung Electronic
|
| K4X56163PG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| MBM29DL161BD MBM29DL164BE70PFTR MBM29DL163BE70PFTR |
16M (2M x 8/1M x 16) BIT Dual Operation
|
Fujitsu Limited
Fujitsu Component Limited.
|
| MB84VA2102-10 MB84VA2103 MB84VA2103-10 |
16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Component Limited.
Fujitsu Limited
|
